Circumscribing defects in optical devices

ABSTRACT

Methods of circumscribing defects in optical devices are described. A perimeter is formed about a defect by laser ablation, where the perimeter electrically isolates the defect. The perimeter does not have damage due to excess energy from the laser and thus does not create new electrical shorts.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.14/398,117, filed on Oct. 30, 2014, titled “CIRCUMSCRIBING DEFECTS INOPITCAL DEVICES,” which is a national phase application under 35 U.S.C §371 to International Application PCT/US2013/041365 (designating theUnited States), titled “CIRCUMSCRIBING DEFECTS IN OPTICAL DEVICES” andfiled on May 16, 2013, which claims benefit of U.S. Provisional PatentApplication Ser. No. 61/649,184, filed on May 18, 2012, titled“CIRCUMSCRIBING DEFECTS IN OPTICAL DEVICES;” each of which is herebyincorporated by reference in its entirety.

FIELD

The description relates generally to optical devices, more particularlyto methods and apparatus related to mitigation of defects in opticaldevices, for example, flat panel displays, electrochromic windows andthe like.

BACKGROUND

Optical devices include photovoltaics, electrochromic devices,thermochromic devices, flat panel displays and the like. Advancements inoptical device technology have increased dramatically in recent yearsincluding ever lower levels of defectivity in the thin film device thatgenerates the desired optical and/or electrical properties. This isparticularly important in devices where visual perception of the deviceis important, because defects often manifest themselves as visuallydiscernible, and thus unattractive, phenomenon to the end user. Still,even with improved manufacturing methods, optical devices have somelevel of defectivity. Moreover, even if an optical device ismanufactured with no visible defects, such visible defects may manifestduring testing and/or deployment of the optical device. One particularlytroublesome defect is an electrical short circuiting defect in anoptical device.

SUMMARY

Various methods herein can be applied to virtually any optical devicethat includes a material that can be isolable locally or where thedefect is stationary; e.g., all solid state electrochromic devices arewell suited for methods described herein. Herein are described methodsfor circumscribing defects in optical devices, e.g., in switchableelectrochromic windows. For convenience, methods are described in termsof application to electrochromic devices; however, this is only meant asa means to simplify the description. Methods described herein may beperformed on an electrochromic device of an electrochromic lite prior toincorporation into an insulated glass unit (IGU), after incorporationinto an IGU (or laminate), or both.

One embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including: a)starting application of a laser at a first fluence level in a firstregion of the laser ablation perimeter; b) translating the laser fromthe first region to a second region of the laser ablation perimeter,while increasing the fluence level of the laser as it transitions fromthe first region to the second region; and c) returning the laser to thefirst region in order to close the perimeter while decreasing thefluence level of the laser; wherein the energy about the laser ablationperimeter is substantially uniform and the overlap of the laser in thefirst region is at least about 25%. Decreasing the fluence level mayinclude defocusing the laser.

Another embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including formingthe laser ablation perimeter by overlapping a starting and a stoppinglaser ablation position, wherein the overlap of the starting and thestopping positions is less than about 25%.

Another embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including: a)starting application of a laser at a first position within an area thatwill be surrounded by the laser ablation perimeter; b) translating thelaser from the first position to a second position, the second positionbeing a part of the laser ablation perimeter; c) translating the laserabout the defect until the laser focus is proximate the second position;d) closing the laser ablation perimeter by overlapping the secondposition with the laser focus; and e) returning the laser to the areasurrounded by the laser ablation perimeter. In one embodiment, e)includes returning the laser to the first position.

In embodiments where overlapping laser lines or points do not includeoverlap between start and stop positions of a laser, the overlap can bebetween about 10% and about 100% of the laser line or point, or betweenabout 25% and about 90% of the laser line or point, or between about 50%and about 90% of the laser line or point.

One embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including: a)starting application of a laser at a first position, within the linethat will define the laser ablation perimeter; b) translating the laserabout the defect until the laser focus is proximate the first position;c) closing the laser ablation perimeter by overlapping the laser focuswith the first position; and d) moving the laser to the area surroundedby the laser ablation perimeter. In one embodiment, d) includes movingthe laser to the center of the perimeter. In one embodiment, d) includesmoving the laser inside the first position in a spiral pattern, at leastsome overlap occurring in the spiral pattern.

One embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including: a)starting application of a laser at a first position, within the areathat will be surrounded by the laser ablation perimeter; b) translatingthe laser from the first position to a second position, the secondposition being a part of the laser ablation perimeter; c) translatingthe laser about the defect until the laser focus is proximate the secondposition; and d) closing the laser ablation perimeter by overlapping thesecond position with the laser focus, wherein the closure position isalso the stopping position of the laser.

One embodiment is a method of forming a substantially circular laserablation perimeter surrounding a defect in an optical device, the methodincluding: a) starting application of a laser at a first position, thefirst position located at what will be the center of the substantiallycircular laser ablation perimeter; b) translating the laser from thefirst position to a second position, the second position being a part ofthe laser ablation perimeter; c) translating the laser about the defectin a substantially circular pattern until the laser focus is proximatethe second position; d) closing the laser ablation perimeter byoverlapping the second position with the laser focus; and e) returningthe laser to the first position where the laser ablation is ceased.

One embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method comprising: a)energizing a laser while the laser beam is shuttered; b) allowing thelaser to reach a steady state energy level; and c) circumscribing thedefect with the laser.

One embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including: a)starting application of a laser at a starting position, within the areathat will be surrounded by the laser ablation perimeter; b) translatingthe laser from the first position and about the defect until the laserfocus crosses its own path, but not at the starting position. The lasermay be stopped at the crossing point or once past the crossing point.

One embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including: a)starting application of a laser at a first position, within the areathat will be surrounded by the laser ablation perimeter; b) translatingthe laser from the first position to a second position, the secondposition being a part of the laser ablation perimeter; and c)translating the laser about the defect until the laser focus crosses itsown path, between the first and second position. The laser may bestopped at the crossing point or once past the crossing point.

One embodiment is a method of forming a laser ablation perimeter about adefect in an optical device. The method includes starting application ofa laser with a laser focus at a first position located proximate thedefect and at least partially mitigating the defect. The method movesthe laser focus from the first position to a second position at thelaser ablation perimeter. The method also moves the laser focus alongthe laser ablation perimeter until the laser focus is proximate thesecond position and then closes the laser ablation perimeter. There maybe an overlap at the second position.

One embodiment is a method of ablating a defect in an optical device.The method includes starting application of a laser with a laser focusat a first position at or near the defect and moving the laser focus tocover one or more regions around the defect. The laser focus can bemoved to cover the regions by, for example, rasterizing the laser focusover the one or more regions. There may be overlap of the laser focusduring rasterizing, or not. A regular or irregular area of laserablation may result.

These and other features and advantages will be described in furtherdetail below, with reference to the associated drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following detailed description can be more fully understood whenconsidered in conjunction with the drawings in which:

FIG. 1A is a schematic cross-section of an electrochromic device in ableached state.

FIG. 1B is a schematic cross-section of an electrochromic device in acolored state.

FIG. 2 is a schematic cross-section of an electrochromic device havingan ion conducting electronically insulating interfacial region ratherthan a distinct IC layer.

FIG. 3 is a schematic cross-section of an electrochromic device with aparticle in the ion conducting layer causing a localized defect in thedevice.

FIG. 4A is a schematic cross-section of an electrochromic device with aparticle on the conductive layer prior to depositing the remainder ofthe electrochromic stack.

FIG. 4B is a schematic cross-section of the electrochromic device ofFIG. 4A, where a “pop off” defect is formed during electrochromic stackformation.

FIG. 4C is a schematic cross-section of the electrochromic device ofFIG. 4B, showing an electrical short that is formed from the pop offdefect once the second conductive is deposited.

FIG. 5 depicts an electrochromic lite having three halo shorting typedefects while the lite is in the colored state, before and after laserscribe to convert the halos into pinholes.

FIGS. 6A-B depict a conventional laser ablation circumscription of aparticle defect.

FIG. 7 depicts a conventional laser ablation circumscription pattern.

FIG. 8 depicts a laser ablation circumscription as described herein.

FIGS. 9-14 depict various laser ablation circumscription patterns inaccord with embodiments described herein.

FIG. 15 shows images of actual laser ablations of varying sizesfollowing a scribe pattern as described in relation to FIG. 7.

FIG. 16 shows a schematic drawing illustrating a method of ablating adefect that moves a laser focus in a pattern that covers an areaencompassing the defect.

DETAILED DESCRIPTION

For the purposes of brevity, embodiments described below are describedin terms of an electrochromic lite. One of ordinary skill in the artwould appreciate that methods and apparatus described herein can be usedfor virtually any optical device having shorting type defects. Opticaldevices include electrochromic devices, thermochromic devices, flatpanel displays, photovoltaic devices, and the like. Also, variousembodiments are described in terms of forming a laser ablation perimeterabout a defect. Typically, these perimeters are drawn or described asbeing circular. This is not necessary, and the perimeters can be of anyshape, whether regular or irregular. Lasers are particularly useful informing the perimeters, but other focused energy sources can besubstituted for any embodiment described herein; this is particularly sowhen the focused energy source has associated transient energy fluxassociated with powering up or turning off the focused energy applied toperform the process. Other focused energy sources may include ion beams,electron beams, and electromagnetic beams having differentfrequencies/wavelengths, for example.

For context, a description of electrochromic devices and defectivity inelectrochromic devices is presented below. For convenience, solid stateand inorganic electrochromic devices are described, however, theembodiments are not limited in this way, i.e., the embodiments apply toany device where a defect, e.g., an electrical shorting defect, can beexcised by circumscription with a laser or other suitable energy source.

Electrochromic Devices

FIG. 1A depicts a schematic cross-section of an electrochromic device,100. Electrochromic device 100 includes a transparent substrate, 102, aconductive layer, 104, an electrochromic layer (EC), 106, an ionconducting layer (IC), 108, a counter electrode layer (CE), 110, and aconductive layer (CL), 114. This stack of layers 104, 106, 108, 110, and114 are collectively referred to as an electrochromic device or coating.This is a typical, though non-limiting, construct of an electrochromicdevice. A voltage source, 116, typically a low voltage source operableto apply an electric potential across the electrochromic stack, effectsthe transition of the electrochromic device from, for example, ableached state to a colored state. In FIG. 1A, the bleached state isdepicted, e.g., the EC and CE layers are not colored, but rathertransparent. The order of layers can be reversed with respect to thesubstrate. Some electrochromic devices will also include a capping layerto protect conductive layer 114. This capping layer may be a polymerand/or an additional transparent substrate such as glass or plastic. Insome devices, one of the conducting layers is a metal to impartreflective properties to the device. In many instances, both conductivelayers 114 and 104 are transparent, e.g., transparent conductive oxides,like indium tin oxide, fluorinated tin oxide, zinc oxides and the like.Substrate 102 is typically a transparent, e.g., glass or plasticmaterial.

Certain devices employ electrochromic and counter electrode (ionstorage) layers that are complementarily coloring. For example, the ionstorage layer 110 may be anodically coloring and the electrochromiclayer cathodically coloring. For device 100 in the bleached state asdepicted in FIG. 1A, when the applied voltage is applied in onedirection as depicted, ions, for example lithium ions, are intercalatedinto ion storage layer 110, the ion storage layer is bleached. Likewise,when the lithium ions move out of electrochromic layer 104, it alsobleaches, as depicted. The ion conducting layer allows movement of ionsthrough it, but it is electrically insulating, thus preventing shortcircuiting the device between the conducting layers (and electrodesformed therefrom).

Electrochromic devices, e.g., those having distinct layers as describedabove, can be fabricated as all solid state and inorganic devices withlow defectivity. Such all solid-state and inorganic electrochromicdevices, and methods of fabricating them, are described in more detailin U.S. patent application Ser. No. 12/645,111, entitled, “Fabricationof Low-Defectivity Electrochromic Devices,” filed on Dec. 22, 2009 andnaming Mark Kozlowski et al. as inventors, and in U.S. patentapplication Ser. No. 12/645,159 (now U.S. Pat. No. 8,432,603), entitled,“Electrochromic Devices,” filed on Dec. 22, 2009 and naming ZhongchunWang et al. as inventors, both of which are incorporated by referenceherein for all purposes.

It should be understood that the reference to a transition between ableached state and colored state is non-limiting and suggests only oneexample, among many, of an electrochromic transition that may beimplemented. Unless otherwise specified herein, whenever reference ismade to a bleached-colored transition, the corresponding device orprocess encompasses other optical state transitions, such asnon-reflective-reflective, transparent-opaque, etc. Further, the term“bleached” refers to an optically neutral state, for example, uncolored,transparent or translucent. Still further, unless specified otherwiseherein, the “color” of an electrochromic transition is not limited toany particular wavelength or range of wavelengths. As understood bythose of skill in the art, the choice of appropriate electrochromic andcounter electrode materials governs the relevant optical transition.

Any material having suitable optical, electrical, thermal, andmechanical properties may be used as substrate 102. Such substratesinclude, for example, glass, plastic, and mirror materials. Suitableplastic substrates include, for example, acrylic, polystyrene,polycarbonate, allyl diglycol carbonate, SAN (styrene acrylonitrilecopolymer), poly(4-methyl-1-pentene), polyester, polyamide, etc. If aplastic substrate is used, it is preferably barrier protected andabrasion protected using a hard coat of, for example, a diamond-likeprotection coating, a silica/silicone anti-abrasion coating, or thelike, such as is well known in the plastic glazing art. Suitable glassesinclude either clear or tinted soda lime glass, including soda limefloat glass. The glass may be untempered, strengthened (heat orchemically) or tempered. An electrochromic device with glass, forexample, soda lime glass, used as a substrate may include a sodiumdiffusion barrier layer between the soda glass and the device to preventdiffusion of sodium ions from the glass into the device. Both glass andplastic substrates are compatible with embodiments described herein, solong as their properties are accounted for in the described methods.This is explained in further detail below.

FIG. 1B is a schematic cross-section of electrochromic device 100 shownin FIG. 1A but in a colored state (or transitioning to a colored state).In FIG. 1B, the polarity of voltage source 116 is reversed, so that theelectrochromic layer is made more negative to accept additional lithiumions, and thereby transition to the colored state; at the same time,lithium ions leave the counter electrode or ion storage layer 110, andit also colors. As indicated by the dashed arrow, lithium ions aretransported across ion conducting layer 108 to electrochromic layer 106.Exemplary materials that color complimentarily in this fashion aretungsten oxide (electrochromic layer) and nickel-tungsten oxide (counterelectrode layer).

Certain electrochromic devices may include reflective materials in oneor both electrodes in the device. For example, an electrochromic devicemay have one electrode that colors anodically and one electrode thatbecomes reflective cathodically. Such devices are compatible withembodiments described herein so long as the reflective nature of thedevice is taken into account. This is explained in more detail below.

The all solid state and inorganic electrochromic devices described abovehave low defectivity and high reliability, and thus are well suited forelectrochromic windows, particularly those with large formatarchitectural glass substrates.

Not all electrochromic devices have a distinct ion conducting layer asdepicted in FIGS. 1A and 1B. As conventionally understood, the ionicallyconductive layer prevents shorting between the electrochromic layer andthe counter electrode layer. The ionically conductive layer allows theelectrochromic and counter electrode layers to hold a charge and therebymaintain their bleached or colored states. In electrochromic deviceshaving distinct layers, the components form a stack which includes theion conducting layer sandwiched between the electrochromic layer and thecounter electrode layer. The boundaries between these three stackcomponents are defined by abrupt changes in composition and/ormicrostructure. Thus, such devices have three distinct layers with twoabrupt interfaces.

Quite surprisingly, it has been discovered that high qualityelectrochromic devices can be fabricated without depositing an ionicallyconducting electrically insulating layer. In accordance with certainembodiments, the counter electrode and electrochromic layers are formedimmediately adjacent one another, often in direct contact, withoutseparately depositing an ionically conducting layer. It is believed thatvarious fabrication processes and/or physical or chemical mechanismsproduce an interfacial region between contacting electrochromic andcounter electrode layers, and that this interfacial region serves atleast some functions of an ionically conductive electronicallyinsulating layer as in devices having such a distinct layer. Suchdevices, and methods of fabricating them, are described in U.S. patentapplication Ser. No. 12/772,055 (now U.S. Pat. No. 8,300,298) and Ser.No. 12/772,075, each filed on Apr. 30, 2010, and in U.S. patentapplication Ser. Nos. 12/814,277 and 12/814,279, each filed on Jun. 11,2010—each of the four applications is entitled “Electrochromic Devices,”each names Zhongchun Wang et al. as inventors, and each is incorporatedby reference herein for all purposes. A brief description of thesedevices follows.

FIG. 2 is a schematic cross-section of an electrochromic device, 200, ina colored state, where the device has an ion conducting electronicallyinsulating interfacial region, 208, serving the function of a distinctIC layer. Voltage source 116, conductive layers 114 and 104, andsubstrate 102 are essentially the same as described in relation to FIGS.1A and 1B. Between conductive layers 114 and 104 is graded region, whichincludes counter electrode layer 110, electrochromic layer 106, and anion conducting electronically insulating interfacial region, 208,between them, rather than a distinct IC layer. In this example, there isno distinct boundary between counter electrode layer 110 and interfacialregion 208, nor is there a distinct boundary between electrochromiclayer 106 and interfacial region 208. Collectively, regions 110, 208 and106 may be thought of as a continuous graded region. There is a diffusetransition between CE layer 110 and interfacial region 208, and betweeninterfacial region 208 and EC layer 106. These devices may be thought ofas “no IC layer” devices. Conventional wisdom was that each of the threelayers should be laid down as distinct, uniformly deposited, and smoothlayers to form a stack. The interface between each layer should be“clean” where there is little intermixing of materials from each layerat the interface. One of ordinary skill in the art would recognize thatin a practical sense there is inevitably some degree of material mixingat layer interfaces, but the point is, in conventional fabricationmethods any such mixing is unintentional and minimal. The inventors ofthis technology found that interfacial regions serving as IC layers canbe formed where the interfacial region includes significant quantitiesof one or more electrochromic and/or counter electrode materials bydesign. This is a radical departure from conventional fabricationmethods. However, as in conventional electrochromic devices, shortingcan occur across the interfacial region. Various methods describedherein are applicable to devices having such interfacial regions, ratherthan IC layers.

The all solid state and inorganic electrochromic devices described abovehave low defectivity and high reliability. However, defects can stilloccur. For context, visually discernible defects in electrochromicdevices are described below in relation to conventional layered stacktype electrochromic devices so as to more fully understand the nature ofthe disclosed embodiments.

Visible Defects in Electrochromic Devices

As used herein, the term “defect” refers to a defective point or regionof an electrochromic device. Defects may be characterized as visible ornon-visible. Often a defect will be manifest as a visually discernibleanomaly in the electrochromic window or other device. Such defects arereferred to herein as “visible” defects. Typically, these defects arevisible when the electrochromic device is transitioned to the tintedstate due to the contrast between the normally operating device area andan area that is not functioning properly, e.g., there is more lightcoming through the device in the area of the defect. Other defects areso small that they are not visually noticeable to the observer in normaluse. For example, such defects do not produce a noticeable light pointwhen the device is in the colored state during daytime. A “short” is alocalized electronically conductive pathway spanning the ion conductinglayer or region (supra), for example, an electronically conductivepathway between the two transparent conductive oxide layers.

In some cases, an electrical short is created by anelectrically-conductive particle spanning the ion conducting layer,thereby causing an electronic path between the counter electrode and theelectrochromic layer or the TCO associated with either one of them. Insome other cases, a defect is caused by a particle on the substrate (onwhich the electrochromic stack is fabricated) and such a particle causeslayer delamination (sometimes called “pop-off”) where the layers do notadhere properly to the substrate. Delamination of layers can also occurwithout association with a particle contaminant and may be associatedwith an electrical short, and thus a halo. A delamination or pop-offdefect can lead to a short if it occurs before a TCO or associated EC orCE is deposited. In such cases, the subsequently deposited TCO or EC/CElayer will directly contact an underlying TCO or CE/EC layer providingdirect electronic conductive pathway. Particle related defects areillustrated below in FIGS. 3 and 4A-4C.

FIG. 3 is a schematic cross-section of an electrochromic device, 300,with a particle, 302, in and spanning the ion conducting layer causing alocalized shorting defect in the device. Device 300 is depicted withtypical distinct layers, although particles in this size regime wouldcause visual defects in electrochromic devices employing ion conductingelectronically insulating interfacial regions as well. Electrochromicdevice 300 includes the same components as depicted in FIG. 1A forelectrochromic device 100. In ion conducting layer 108 of electrochromicdevice 300, however, there is conductive particle 302 or other artifactcausing a defect. Conductive particle 302 results in a short betweenelectrochromic layer 106 and counter electrode layer 110. This shortaffects the device locally in two ways: 1) it physically blocks the flowof ions between electrochromic layer 106 and counter electrode layer110, and 2) it provides an electrically conductive path for electrons topass locally between the layers, resulting in a transparent region 304in the electrochromic layer 106 and a transparent region 306 in thecounter electrode layer 110, when the remainder of layers 110 and 106are in the colored state. That is, if electrochromic device 300 is inthe colored state, where both electrochromic layer 106 and ion storagelayer 110 are supposed to be colored, conductive particle 302 rendersregions 304 and 306 of the electrochromic device unable to enter intothe colored state. These defect regions are sometimes referred to as“halos” or “constellations” because they appear as a series of brightspots or stars against a dark background (the remainder of the devicebeing in the colored state). Humans will naturally direct theirattention to halos due to the high contrast of halos against a coloredwindow and often find them distracting and/or unattractive. As mentionedabove, visible shorts can be formed in other ways.

FIG. 4A is a schematic cross-section of an electrochromic device, 400,with a particle, 402, or other debris on conductive layer 104 prior todepositing the remainder of the electrochromic stack. Electrochromicdevice 400 includes the same components as electrochromic device 100.Particle 402 causes the layers in electrochromic stack to bulge in theregion of particle 402, due to conformal layers 106-110 being depositedsequentially over particle 402 as depicted (in this example, transparentconductor layer 114 has not yet been deposited). While not wishing to bebound by a particular theory, it is believed that layering over suchparticles, given the relatively thin nature of the layers, can causestress in the area where the bulges are formed. More particularly, ineach layer, around the perimeter of the bulged region, there can bedefects in the layer, for example, in the lattice arrangement, or on amore macroscopic level, cracks or voids. One consequence of thesedefects would be, for example, an electrical short betweenelectrochromic layer 106 and counter electrode layer 110 or loss of ionconductivity in layer 108. These defects are not depicted in FIG. 4A,however.

Referring to FIG. 4B, another consequence of defects caused by particle402 is called a “pop-off.” In this example, prior to deposition ofconductive layer 114, a portion above the conductive layer 104 in theregion of particle 402 breaks loose, carrying with it portions ofelectrochromic layer 106, ion conducting layer 108, and counterelectrode layer 110. The “pop-off” is piece 404, which includes particle402, a portion of electrochromic layer 106, as well as ion conductinglayer 108 and counter electrode layer 110. The result is an exposed areaof conductive layer 104.

Referring to FIG. 4C, after the pop-off of piece 404 and once conductivelayer 114 is deposited, an electrical short is formed where conductivelayer 114 comes in contact with conductive layer 104. This electricalshort would leave a transparent region or halo in electrochromic device400 when it is in the colored state, similar in appearance to the defectcreated by the short described above in relation to FIG. 3.

A typical defect causing a visible short may have a physical dimensionof about 3 micrometers (sometimes smaller or larger, however) which is arelatively small defect from a visual perspective. However, theserelatively small defects result in a visual anomaly, the halo, in thecolored electrochromic window that are, for example, about 1 cm indiameter, and sometimes larger. Halos can be reduced significantly byisolating the defect, for example circumscribing the defect via laserscribe or by ablating the material directly without circumscribing it.For example, a circular, oval, triangular, rectangular, or other shapedperimeter is ablated around the shorting defect thus electricallyisolating it from the rest of the functioning device (see also FIGS. 5and 6 and associated description). The circumscription may be only tens,a hundred, or up to a few hundred microns in diameter. Bycircumscribing, and thus electrically isolating the defect, what was thevisible short will now resemble only a small point of light to the nakedeye when the window is colored and there is sufficient light on theother side of the window. When ablated directly, withoutcircumscription, there remains no EC device material in the area wherethe electrical short defect once resided. Rather, there is a hole in thedevice and the base of the hole is, e.g., the float glass, the diffusionbarrier, the lower transparent electrode material, or a mixture thereof.Since these materials are all transparent, light may pass through thebase of the hole in the device, again, appearing only as a small pointof light.

One problem with ablating a defect directly is that there is a chancethat there will be further shorting issues, e.g., a metallic particlecould be melted, with its size increased relative its size to prior toablation. This could cause further shorting. For this reason, it isoften useful to circumscribe defects, leaving a “buffer zone” ofnon-defective device around the defect (see FIGS. 6A and 6B andassociated description). Depending on the diameter of a circumscribeddefect, and the width of the laser beam, circumscribed pinholes may havesome EC material, or not, remaining within the circumscription (thecircumscription is typically, though not necessarily, made as small aspossible). Such mitigated short defects may be manifest as pin points oflight against the colored device, thus these points of light arecommonly referred to as “pinholes.” Isolation of an electrical short bycircumscribing would be an example of a man-made pinhole, one purposelyformed to convert a halo into a much smaller visual defect. However,pinholes may also arise as a natural result of defects in the opticaldevice.

A pinhole is a region where one or more layers of the electrochromicdevice are missing or damaged so that electrochromism is not exhibited.Pinholes are not electrical shorts, and, as described above, they may bethe result of mitigating an electrical short in the device. A pinholemay have a defect dimension of between about 25 micrometers and about300 micrometers, typically between about 50 micrometers and about 150micrometers, and thus is much harder to discern visually than a halo. Inorder to reduce the visible perception of pinholes resulting from themitigation of halos, in certain embodiments the size of apurposely-created pinhole is minimized. In one embodiment, a laserablation circumscription has an average diameter of about 400micrometers or less, in another embodiment about 300 micrometers orless, in another embodiment about 200 micrometers or less, and in yetanother embodiment about 100 micrometers or less. Depending upon the enduser, pinholes on the larger side of this size regime tend not to benoticeable. If possible, laser ablation circumscriptions are made on thesmaller side of this size regime, e.g., about 200 micrometers or less.

Circumscription of Visual Defects

FIG. 5 depicts an electrochromic lite, 500, having three halo shortingtype defects (left) in the viewable area of the lite while the lite isin the colored state. The lite on the left of FIG. 5 shows the halosprior to mitigation. The defects show up as constellations or halos,sometimes on the scale of centimeters in diameter. Thus, they arevisually distracting and unappealing to the viewer. The lite on theright depicts the same electrical short defects causing the three halos,after they have been circumscribed to form pinholes. It is apparent thatpinholes are favorable to halos. However, oftentimes defects that arelaser circumscribed in a conventional way do not cleanly form pinholes,that is, the pinholes are often electrically leaky and thus are not“clean” pinholes. In such cases, leakage causes the pinholes to resemblehalos over time. The inventors have discovered the reason for thisproblem and have developed methods of overcoming it.

The left-hand portion of FIG. 6A depicts a cross section of device 300,as described in relation to FIG. 3, which has a conductive particlespanning ion conducting layer 108. Device 300 is in a colored state, butthe electrical short from the particle creates non-colored regions inthe electrochromic and counter electrode layers, 106 and 110,respectively. Referring to the right-hand portion of FIG. 6A, when theparticle causing this visual anomaly is circumscribed, e.g., whiledevice 300 remains in the colored state, a continuous trench, 600, isformed around the particle as well as some of the device stack. Trench600 isolates a portion, 300 b, of device 300 from the bulk device, 300a. FIG. 6B shows this laser isolation scribe from a top view (forsimplicity the shorting particle is not shown). Ideally this laserablation electrically isolates material 300 b from the bulk device 300a. So, the device material remaining within trench 600 does not color,but does have some absorptive properties and is thus slightly morecolored than substrate 102 at the bottom of trench 600. However, asdescribed above, this electrical isolation is not always so clean asdepicted in FIGS. 6A and 6B. This is explained in more detail inrelation to FIG. 7.

Laser isolation need not penetrate all the layers of the device stack,e.g., as depicted in FIGS. 6A and 6B. The laser can penetrate any depthfrom removing the outer layer (e.g., 114) to the full stack, and anydepth in between. For example, the laser need only penetrate one of thetransparent conducting layers (104 or 114) in order to electricallyisolate the stack material within the perimeter of the scribe. Thescribe may penetrate one, two, three, four or all five layers of thedevice (having five layers). In devices that have graded compositionsrather than distinct layers, e.g., an electrochromic device as describedin association with FIG. 2, penetration of the entire device structuremay be necessary.

Referring to FIG. 7, conventional laser circumscription methods employ a“closed” perimeter scribe. The closed perimeter could be of any shape,but for convenience circular perimeters are described herein. That is,the laser is applied to a local region or spot, 700, chosen at somedistance from a defect. The laser is applied around the defect in aclosed pattern, e.g., a circle, where the laser begins ablation at spot700 and ends at spot 700; that is, the beginning and ending position ofthe laser is substantially the same or at least there is some overlap ofthe area of the laser focus and/or width of the laser scribe at thebeginning and ending positions. “Overlap” in this description refers tothe overlapping of the area of the laser focus and/or width of the laserscribe created by the laser path, and how this area or width isoverlapped by the laser during ablation. For example, if the laser isfocused on a first position and then again on this same position at theend of the laser path, then this is 100% overlap. If, however, the laseris focused on the first position and then on a second position that ismoved a distance equal to the radius of the focal point, then this is50% overlap.

This type of closed pattern, where the start and end point overlap eachother and are part of the perimeter thus formed, creates furtherproblems. Although it isolates the defect within it, perimeters formedin this way have problems in the region where the ablation start and endoverlap each other. That is, for any particular device, a particularfluence (energy delivered per unit area) is chosen such that it isenough to ablate the device layers and effectively electrically isolateone area of the device from another. This is effective for the majorityof the perimeter region when a defect is circumscribed, but in the areawhere the laser starts, and where the start and finish overlap eachother, there is often excessive energy which results in stack meltingand electrical shorting of the film stack in that area. This isparticularly true of the point where the laser starts. There is atransient energy flux created when the laser is energized. This excessenergy is imparted to the device when the laser first strikes thedevice. This is depicted in a micrograph in FIG. 7 (bottom) of a portionof an actual laser circumscription, showing that the width of thecircumscription is wider at a point, 705, where the laser started andfinished the perimeter around a defect (in this example the overlap ofstarting and stopping point was 40%). It is at this point where furthershorting occurs. In order to avoid this issue, a lower fluence may beselected, but that often results in insufficient ablation of the filmaround the remainder of the perimeter. Embodiments described hereinovercome these problems, e.g., by creating an ablation perimeter wherethe fluence is sufficient to electrically isolate the shorting defect,while substantially uniform about the ablation perimeter.

One method to overcome the above-described problem of excess energy dueto the transient flux during laser energizing is to shutter the laserbeam until it reaches steady state energy level and then to apply thelaser to the circumscription pattern. In this way excess energy can beavoided. One embodiment is a method of forming a laser ablationperimeter surrounding a defect in an optical device, the methodincluding: a) energizing a laser while the laser beam is shuttered; b)allowing the laser to reach a steady state energy level; and c)circumscribing the defect with the laser. This method may be used withany circumscription pattern described herein, because the issue ofexcessive energy is avoided by use of the shutter. For example, aconventional closed pattern as described in relation to FIG. 7 maysuffice when using this method.

Another method to overcome the above-described problem of excess energyis to make a conventional perimeter, but to overlap the starting andending positions of the laser beam only enough so as to close theperimeter but not create excess energy (e.g., to minimize melting andshorting created thereby); the smaller the overlap, the smaller theportion of the device that may have shorting due to excess energy.Because the overlap is minimized, high precision is necessary to ensureboth complete closure of the perimeter (to ensure electrical isolation)as well as minimum damage due to excess energy in the overlap region(thus causing electrical shorts). One embodiment is a method of forminga laser ablation perimeter surrounding a defect in an optical device,the method including forming the laser ablation perimeter withoutcomplete overlap of both the starting and the stopping the laser beampositions, wherein the overlap of the starting and stopping positions isless than about 25%. In one embodiment the overlap of the starting andstopping positions is less than about 10%, and in another embodiment,less than about 5%. However, this method may need more adjustments thanother methods described below, as excess energy may occur with thetransient energy flux at laser startup; e.g., overlapping of the startand finish points may be irrelevant because the start point itself maycause excessive fluence. Other embodiments compensate for this, asdescribed below.

In one embodiment, laser circumscription is performed in a closedpattern as in a conventional sense described above, with greater thanabout 25% overlap of starting and stopping positions, but where aprocess window is chosen such that lower fluence is used at thebeginning and end of the circumscription (e.g., during the transientfluence conditions associated with starting and stopping the laser) thanover the remainder of the circumscription. That is, the lasercircumscription employs a two phase process window, including atransient process condition (at the beginning and/or end of the scribe)and a steady state process condition during the remainder of the laserscribe process. In this embodiment, excessive energy is avoided bylowering the energy delivered at the start and end of the perimeter thusformed, that is, during the transient process condition. One embodimentis a method of forming a laser ablation perimeter surrounding a defectin an optical device, the method including: a) starting application of alaser at a first fluence level in a first region of the laser ablationperimeter; b) translating the laser from the first region to a secondregion of the laser ablation perimeter, while increasing the fluencelevel of the laser as it transitions from the first region to the secondregion; and c) returning the laser to the first region in order to closethe perimeter while decreasing the fluence level of the laser, whereinthe energy about the laser ablation perimeter is substantially uniformand the overlap of the laser in the first region is at least 25%. Byattenuating the fluence at the start and ending positions of the laser,during which otherwise excess energy would result, an ablation perimeterof substantially uniform energy is achieved. Decreasing the fluencelevel can be achieved, for example, by defocusing the laser, whileincreasing the fluence can be achieved by focusing the laser. One ofordinary skill in the art would appreciate that other ways of increasingand decreasing the fluence are possible. In other embodiments, laserperimeters are formed without having to change the fluence at any pointduring formation of the perimeter. These embodiments are described inmore detail below.

In certain embodiments, a laser perimeter is formed by starting and/orstopping the scribing process within the perimeter, that is, within thearea surrounded by the perimeter. The distance within the perimeter thatthe starting and/or stopping point is located is chosen so that it issufficiently far away from the perimeter scribe so there is no excessiveenergy that would occur otherwise at the perimeter. The starting andstopping point need not be at the same location, but can be. Forexample, in one embodiment, the scribe starts and ends within theperimeter formed at the center of a circular perimeter. This is depictedin FIG. 8.

The top portion of FIG. 8 depicts a laser scribe pattern. The patternstarts proximate or at the center, 800, of a circular perimeter that isto be formed. The defect is typically located proximate 800. The laseris moved to a position, 805, to form an outer radius, and then acircular pattern is scribed. When the laser reaches point 805, orproximate thereto, it travels back toward the center of the circularpattern, proximate position 800. In this example, excessive energy dueto the transient process conditions of starting and ending the laserscribe process are in the center of the perimeter formed, and thus areisolated from the perimeter portion of the pattern. The fluence ischosen to make effective electrical isolation scribes at the perimeter.Proximate position 805, the scribe line may overlap, so long as there isnot undue overlap that would otherwise cause electrical shorting as inconventional laser circumscription.

The bottom portion of FIG. 8 shows an actual laser circumscriptionfollowing the pattern described in the upper portion of FIG. 8 (in thisexample the pattern is 300 □m in diameter). In this example, the laserline overlaps 90% of the thickness of the line at point 805 andcontinues inward to stop at position 800. In one embodiment, the overlapis between about 10% and about 100% at some point along the perimeter,e.g., to close the perimeter as in the example described in relation toFIG. 8. In one embodiment, the overlap is between about 25% and about90%, and in another embodiment, between about 50% and about 90%. In thisexample, the “dimple,” 810, in the perimeter portion reflects theincomplete (i.e., about 90%) overlap of the line at position 805; if theline had overlapped 100%, there would be no dimple in the circularpattern. Note also that the interior (electrically isolated) portion,815, of the device does not tint as the bulk device, 820, is tinted.This particular method has the added feature that the starting andstopping point is centered on the defect, so the excess energy isdirected to the defect itself. Thus, the coordinates of the defect areused as the start and stop point of the laser pattern to form theperimeter around the defect. The excess energy is contained within theperimeter and thus causes no further shorting; also, this excess energyat the center may aid in making the pinhole created less noticeable asit melts the device materials in that region and may diffuse lightbetter than the defect alone may have done. Also, by having the startingand stopping point at the center, the distance between the perimeterformed and the excess energy spot is maximized in all directions.

By using patterns such as described in relation to FIG. 8, any transienteffects resulting in excess energy are contained within the perimeterregion and thus do not cause further electrical shorting. Put anotherway, a highly uniform perimeter portion of a scribe is formed, i.e.,without any excess fluence along the perimeter portion of the scribe. Byisolating portions of excess energy from the perimeter portion of thescribe, the scribe process can be adjusted for good steady stateconditions, dramatically widening the range of acceptable parametersettings that result in effective and uniform electrical isolation aboutthe perimeter portion of the scribe. For example, fluence levels can beset at higher values to allow adequate steady state scribing, whileisolating excessive energy (from starting and stopping the laser) withinthe perimeter region.

In some embodiments, the starting point of the laser focus is locatednear or at the defect (e.g., a pinhole defect). By starting the laserfocus at this location, the laser can at least partially, if notentirely, mitigate the defect by vaporize the materials in a region ator near the defect before the laser focus is moved to another locationalong the ablation perimeter. Vaporizing the materials in this regionmay diffuse light better than if the defect were only circumscribed. Anexemplary method of forming a laser ablation perimeter about a defect inan optical device includes: a) starting application of a laser with alaser focus at a first position located proximate the defect; b) atleast partially mitigating the defect; c) moving the laser focus fromthe first position to a second position that is part of the laserablation perimeter; d) moving the laser focus along the laser ablationperimeter until the laser focus is proximate the second position; and e)closing the laser ablation perimeter. In some cases, closing the laserablation perimeter includes overlapping the laser focus at the secondposition. The overlapping of the second position is as described abovein relation to FIG. 8. In one case, the method also includes moving thelaser focus to a position within the area surrounded by the laserablation perimeter. In another case, returning the laser to within thearea surrounded by the laser ablation perimeter includes returning thelaser focus proximate the first position.

One embodiment is a method of forming a laser ablation perimeter about adefect in an optical device including: a) starting application of alaser at a first position, within an area that will be surrounded by thelaser ablation perimeter; b) translating the laser focus from the firstposition to a second position, the second position being a part of thelaser ablation perimeter; c) translating the laser about the defectuntil the laser focus is proximate the second position; d) closing thelaser ablation perimeter by overlapping the second position with thelaser focus; and e) returning the laser to a position within the areasurrounded by the laser ablation perimeter. The laser is stopped aftere). The overlapping of the second position is as described above inrelation to FIG. 8. In one case, returning the laser to the areasurrounded by the laser ablation perimeter includes returning the laserto the first position and stopping the ablation. In another case, thelaser is stopped at a third position, within the area surrounded by theperimeter. One example of this is described in relation to FIG. 9.

FIG. 9 shows a pattern, similar to that described in relation to FIG. 8.In this pattern, the laser ablation starts at position 900, moves alonga line to position 905 to form a radius, then circles counterclockwise(in this example, but clockwise would work) until reaching 905, wherethere is overlap as described above. Then the laser moves to position910, within the interior of the perimeter portion of the scribe. In thisexample, the laser stops short of position 900 at the end of the scribeprocess. This is an example of the laser start and stop positions beingdifferent, but both inside the perimeter portion of the scribe.

FIG. 10 shows a pattern, similar to that described in relation to FIG.8. In this pattern, the laser ablation starts at position 1000, movesalong a line to position 1005 to form a radius, and then circlescounterclockwise until reaching 1005, where there is overlap asdescribed above. In this example, the laser stops proximate, or on,position 1005 at the end of the scribe process. This is an example ofthe laser start being inside the perimeter portion of the scribe withthe laser end position being part of the perimeter portion of thescribe. By choice of the start position of the laser and by avoiding anyoverlap of start and stopping positions, there is no excessive energy inthe perimeter portion of the scribe.

One embodiment is a method of forming a laser ablation perimeter about adefect in an optical device including: a) starting application of alaser at a first position, within the area that will be surrounded bythe laser ablation perimeter; b) translating the laser from the firstposition to a second position, the second position being a part of thelaser ablation perimeter; c) translating the laser about the defectuntil the laser focus is proximate the second position; and d) closingthe laser ablation perimeter by overlapping the second position with thelaser focus, wherein the closure position is also the stopping positionof the laser. The overlap is as described above with respect to FIG. 8.

FIG. 11 shows a pattern, similar to that described in relation to FIG.8. In this pattern, the laser ablation starts at position 1100, movescounterclockwise along a circular path until reaching 1100, where thereis overlap as described above with respect to FIG. 8. Then the lasermoves to position 1110, within the perimeter portion of the scribe. Thisis an example of the laser start being part of the perimeter portion ofthe scribe while the laser end position is within the perimeter portionof the scribe. In this example, since the start position is part of theperimeter region, careful choice of laser energy may be required.

One embodiment is a method of forming a laser ablation perimeter about adefect in an optical device including: a) starting application of alaser at a first position, within the line that will define the laserablation perimeter; b) translating the laser about the defect until thelaser focus is proximate the first position; c) closing the laserablation perimeter by overlapping the laser focus with the firstposition; and d) moving the laser to within the area surrounded by thelaser ablation perimeter. The overlap is as described above with respectto FIG. 8. In one embodiment, d) further includes moving the laser tothe center of the perimeter. In another embodiment, d) further includesmoving the laser inside the first position in a spiral pattern, at leastsome overlap occurring in the spiral pattern. An example of this latterembodiment is described in relation to a specific example in FIG. 12.

FIG. 12 shows a pattern, similar to that described in relation to FIG.8. In this pattern, the laser ablation starts at position 1200, movescounterclockwise along a substantially circular path until coming closeto position 1200. In this example, the laser focus is brought close tothe starting position, but spirals inward, so that there is some overlapof the ablation focus to close the perimeter, but not create excessenergy proximate position 1200. The overlap is as described above withrespect to FIG. 8. In this example, since the start position is part ofthe perimeter region, careful choice of laser energy may be required. Inthe example depicted, the laser is brought to point 1210; however thelaser could stop prior to this position so long as the perimeter isclosed by the overlap described. This is an example of the laser startbeing part of the perimeter portion of the scribe while the laser endposition is within the perimeter portion of the scribe. Since there isnot overlap of both the beginning and ending transients of the laser,there is not excessive energy.

FIG. 13 shows a pattern, similar to that described in relation to FIG.12. In this pattern, the laser ablation starts at position 1300, movescounterclockwise along a substantially circular path until spiralinginward to cross at a point, 1305, and finally ending at point 1310. Inthis example, there is 100% overlap at crossing point 1305, but both thestart and stop positions are within the perimeter portion of the scribepattern, therefore excess energy is avoided.

One embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including: a)starting application of a laser at a starting position, within the areathat will be surrounded by the laser ablation perimeter; b) translatingthe laser from the first position and about the defect until the laserfocus crosses its own path, but not at the starting position. The lasermay be stopped at the crossing point or once past the crossing point.

FIG. 14 shows a pattern, similar to that described in relation to FIG.13. In this pattern, the laser ablation starts at position 1400, movesoutward along a radius to position 1405, then runs counterclockwisealong a substantially circular path until reaching a third point, 1410,the runs inward along a radius, crossing the first radius at point 1415and finally ending at point 1420. In this example, there is 100% overlapat crossing point 1415, but both the start and stop positions are withinthe perimeter portion of the scribe pattern, therefore excess energy isavoided. Also, another feature of this pattern is that since the angle θis acute, there is gradually increasing overlap between the lines priorto the full intersection point 1415. This gradual overlap assures thatthe region of the perimeter of the scribe proximate intersection 1415does not have excessive energy, as the point of maximum overlap, 1415,is not the exterior-most portion of the scribe line, but rather is agradient of overlap starting from lower to higher overlap.

One embodiment is a method of forming a laser ablation perimetersurrounding a defect in an optical device, the method including: a)starting application of a laser at a first position, within the areathat will be surrounded by the laser ablation perimeter; b) translatingthe laser from the first position to a second position, the secondposition being a part of the laser ablation perimeter; c) translatingthe laser about the defect until the laser focus crosses its own path,between the first and second position. The laser may be stopped at thecrossing point or once past the crossing point.

Example

Laser ablation perimeters were formed in an electrochromic device usingthe pattern described in relation to FIG. 8 in comparison to aconventional laser ablation perimeter. The laser perimeter was ablatedusing a fluence of 1.6 J/cm2 using 90% overlap of the laser linesstarting at the point on the perimeter where the lines meet in order toclose the perimeter and continuing on to the center of the perimeterwhere the laser ablation also started. Perimeters of 50, 100, 200, 300,400 and 500 microns were formed. The actual patterns are shown in FIG.15. FIG. 15 shows the colored electrochromic device with the laserscribe patterns arranged thereon. As shown, the device remaining in theinterior region of the perimeter is not colored as in the bulk devicesurrounding the perimeters. Further testing showed that the 50 □mpattern did show some leakage, but this was likely the result of thegeometrical limitation due to the size of the laser focal point ascompared to the pattern size. If a smaller focal point is used, thensmaller patterns, such as 50 □m in diameter, are likely to work just aswell as the larger sized patterns.

One embodiment is a method of ablating a defect (e.g., pinhole orshort-related defect) with a laser focus spot that first locates thefocus spot at or near the defect and then moves the focus spot to ablateover an ablation area that includes the defect area. This may beconveniently done by first focusing the laser at a location at or nearthe center of the defect, but the method does not necessarily need to doso. In some cases, the focus spot may be moved in such a way to coverone or more regions. These regions may overlap each other in some cases.A rasterizer may be used to move the focus spot over the one or moreregions. The ablated area need not be a regular shape. The ablated areacan be in the form of, for example, a circle, a rectangle, sawtoothpattern, a cross shape, or other shape. FIG. 16 shows a schematicdrawing illustrating this method. In this illustrated example, a laserfocus spot 1610 is first located at or near a defect 1600. The focusspot 1610 can be moved in any direction (as illustrated by the arrows)to ablate over an area that includes the defect area. Two examples ofshapes of ablated areas are shown. The first example is a rectangularablated area 1620. The second example is a cross pattern ablated area1630. In some cases, the focus spot may be moved in one or more regionsthat make up the ablated area.

Although the foregoing embodiments have been described in some detail tofacilitate understanding, the described embodiments are to be consideredillustrative and not limiting. It will be apparent to one of ordinaryskill in the art that certain changes and modifications can be practicedwithout avoiding the scope of the following claims.

1-41. (canceled)
 42. A method of forming a laser ablation perimetersurrounding a defect in an electrochromic device, the method comprising:(a) energizing a laser while a laser beam is shuttered; (b) allowing thelaser to reach a steady state energy level before opening a shutter; and(c) applying a laser focus at a first position located within an areathat will be surrounded by the laser ablation perimeter andcircumscribing the defect with the laser beam by moving the laser focusalong the laser ablation perimeter.
 43. The method of claim 42, furthercomprising closing the laser ablation perimeter by overlapping the laserfocus at a second position at the laser ablation perimeter.
 44. Themethod of claim 43, further comprising returning the laser focus to thearea surrounded by the laser ablation perimeter where a laser ablationis then ceased.
 45. The method of claim 43, wherein overlapping thelaser focus at the second position generates an overlap of between 25%and 90% of a thickness of a laser line.
 46. The method of claim 43,wherein overlapping the laser focus at the second position generates anoverlap of between 25% and 90% of a thickness of a laser line.
 47. Themethod of claim 43, wherein overlapping the laser focus at the secondposition generates an overlap of between 50% and 90% of a thickness of alaser line.
 48. The method of claim 42, wherein the laser ablationperimeter has an average diameter of 200 micrometers or less.
 49. Themethod of claim 42, wherein the laser ablation perimeter has an averagediameter of 100 micrometers or less.
 50. The method of claim 42, whereina fluence level of the laser at a beginning and end of thecircumscription of the defect is lower than a fluence level of the laserduring the remainder of the circumscription of the defect.
 51. Themethod of claim 42, wherein circumscribing the defect with the laserbeam includes increasing a fluence level of the laser while translatingthe laser focus from a first region to a second region of the laserablation perimeter.
 52. The method of claim 51, further comprisingincreasing the fluence level while translating the laser focus from thesecond region to the first region to close the laser ablation perimeter.53. A method of ablating a defect in an electrochromic device, themethod comprising: (a) locating a laser focus at a first position at ornear the defect; and (b) moving the laser focus to ablate one or moreregions that include a defect area, wherein moving the laser focusincludes rasterizing the laser focus over the one or more regions. 54.The method of claim 53, wherein the one or more regions are overlapping.55. The method of claim 54, wherein moving the laser focus to ablate theone or more overlapping regions comprises overlapping the laser focus inoverlapping areas.
 56. The method of claim 53, wherein the one or moreregions form a cross shape.
 57. The method of claim 53, wherein the oneor more regions form a rectangular shape.
 58. The method of claim 53,wherein the one or more regions form a sawtooth pattern.
 59. The methodof claim 53, wherein the laser focus is in the form of a laser spot. 60.The method of claim 59, wherein the laser spot is in a rectangularshape.
 61. The method of claim 53, wherein there is an overlap of thelaser focus during rasterizing.